unisonic technologies co., ltd utt25n08 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-502-749.a 25a, 80v n-channel power mosfet ? description the utc utt25n08 is an n-channel enhancement mode power mosfet using utc?s advanced technology to provide the customers with a minimum on- state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc utt25n08 is universally applied in low voltage, such as automotive, high efficiency switch ing for dc/dc converters, and dc motor control. ? features * r ds(on) <0.12 ? @v gs = 10 v * typically 32pf low c rss * high switching speed * typically 19nc low gate charge ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt25n08l-tn3-r UTT25N08G-TN3-R to-252 g d s tape reel utt25n08l-tn3-t utt25n08g-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
utt25n08 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-749.a ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 80 v gate-source voltage v gss 25 v drain current continuous i d 25 a pulsed i dm 100 a power dissipation p d 50 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 100 c/w junction to case jc 2.5 c/w ? electrical characteristics (t j = 25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 80 v drain-source leakage current i dss v ds =80v, v gs =0v 1 a gate- source leakage current forward i gss v gs =+25v, v ds =0v +100 na reverse v gs =-25v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =25a 120 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 600 780 pf output capacitance c oss 165 215 pf reverse transfer capacitance c rss 32 40 pf switching parameters total gate charge q g v gs =10v, v ds =80v, i d =25a (note 1, 2) 19 25 nc gate to source charge q gs 3.9 nc gate to drain charge q gd 9.0 nc turn-on delay time t d ( on ) v dd =50v, i d =25a, r l =50 ? , v gs =10v, r g =25 ? (note 1, 2) 7.5 25 ns rise time t r 150 310 ns turn-off delay time t d ( off ) 20 50 ns fall-time t f 65 140 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 25 a maximum body-diode pulsed current i sm 100 a drain-source diode forward voltage v sd i s =25a, v gs =0v 1.5 v notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
utt25n08 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-749.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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